首页   按字顺浏览 期刊浏览 卷期浏览 Fabrication of an InGaAs single quantum well circular ring laser by direct laser patter...
Fabrication of an InGaAs single quantum well circular ring laser by direct laser patterning

 

作者: M. C. Shih,   M. H. Hu,   M. B. Freiler,   M. Levy,   R. Scarmozzino,   R. M. Osgood,   I. W. Tao,   W. I. Wang,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 20  

页码: 2608-2610

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113099

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The fabrication of single quantum well (SQW) ridge waveguide ring laser in strained InGaAs is described which utilizes direct‐write laser lithography followed by cryogenic UV laser‐assisted etching. The laser has a threshold current of 270 mA and emits ∼14 mW of single‐frequency output. ©1995 American Institute of Physics.

 

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