Dopant‐enhanced low‐temperature epitaxial growth ofinsitudoped silicon by rapid thermal processing chemical vapor deposition
作者:
T. Y. Hsieh,
K. H. Jung,
Y. M. Kim,
D. L. Kwong,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 1
页码: 80-82
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104452
出版商: AIP
数据来源: AIP
摘要:
We have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition. Heavily arsenic‐doped epitaxial layers with very abrupt dopant transition profiles and relatively uniform carrier distributions have been achieved at 800 °C. In addition, it is found that defect formation is closely related to dopant concentration.
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