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Dopant‐enhanced low‐temperature epitaxial growth ofinsitudoped silicon by rapid thermal processing chemical vapor deposition

 

作者: T. Y. Hsieh,   K. H. Jung,   Y. M. Kim,   D. L. Kwong,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 58, issue 1  

页码: 80-82

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104452

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition. Heavily arsenic‐doped epitaxial layers with very abrupt dopant transition profiles and relatively uniform carrier distributions have been achieved at 800 °C. In addition, it is found that defect formation is closely related to dopant concentration.

 

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