Vacuum evaporation has been employed to obtain reproducible (invariable) epitaxial growth over wide ranges of substrate temperature in the cases of 15 combinations of group II‐VI compounds with various substrate surfaces. In all these cases only one basic structure was found in the films. Reproducible epitaxy could not be obtained in the case of ZnSe on (111) Ge. It is suggested that Aung San's variable structures represent scatter arising from growth conditions that do not result in reproducible epitaxial growth. It is pointed out that the interpretations suggested by Aung San for the electron diffraction patterns that he published in two cases do not correspond to his observation, and in the third case, it is not the only interpretation that is consistent with the diffraction pattern. Tilting and dark‐field microscopy experiments are necessary to identify these film structures.