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Using the semiconductor junction in quantum interference devices

 

作者: M. B. Simmonds,  

 

期刊: Journal of Applied Physics  （AIP Available online 1974）
卷期: Volume 45, issue 1  

页码: 366-368

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1662986

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have fabricated small‐area tunnel junctions of a lead‐tellurium‐lead structure. These have been used in conjunction with bulk superconductors to make hybrid quantum interference devices. We have successfully operated these devices at bias frequencies of 30 MHz, 300 MHz, and 10 GHz.

 

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