Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 &mgr;m/min at deposition temperatures in the range of 500–650 °C. Hall-effect measurements show a majority carrier mobility of200 cm2/V sat a hole concentration of1.4×1017 cm−3in our films. A minority carrier diffusion length of 4.5 &mgr;m is determined from quantum efficiency measurements in the epitaxially grown Si films. ©1998 American Institute of Physics.