Characteristics of erbium implants in silicon‐on‐insulator
作者:
Y. S. Tang,
B. J. Sealy,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2530-2532
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346474
出版商: AIP
数据来源: AIP
摘要:
The characteristics of erbium implants in a silicon‐on‐insulator structure were studied by photoluminescence and electrical activation measurements. The results indicate that a correlation exists between the luminescence energy or the lattice configuration and the electrical activation of the erbium in the implanted materials. Meanwhile, this work suggests a new way to enhance the luminescence efficiency of the erbium implanted materials.
点击下载:
PDF
(341KB)
返 回