X‐ray studies of heat treated SiGe/Si strained‐layer superlattices
作者:
S. M. Prokes,
M. Fatemi,
K. L. Wang,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 2
页码: 254-257
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584821
出版商: American Vacuum Society
关键词: X−RAY DIFFRACTION;SILICON ALLOYS;GERMANIUM ALLOYS;SUPERLATTICES;MOLECULAR BEAM EPITAXY;DIFFUSION;ANNEALING;HIGH TEMPERATURE;(Ge,Si);Si
数据来源: AIP
摘要:
An x‐ray study of annealing effects in Si0.65Ge0.35/Si strained‐layer superlattices grown by molecular‐beam epitaxy (MBE) at 500 °C is reported. The samples were subjected to thermal treatments between 600 and 698 °C, and the superlattice peaks and Si(004) peak were monitored at both low and high angles using powder and double crystal diffractometries. The interdiffusion coefficient of the average composition, obtained from the decay in intensity of the first superlattice peak about (000), was found to be similar to the results obtained from satellites about (004). This leads to the important conclusion that the diffusion coefficient can be obtained using the high‐angle technique, which is generally faster and less susceptible to experimental errors. The comparison between the two groups of measurements further emphasizes the fact that the critical slopes of the intensity plots should be excluded from the calculation of the diffusion coefficient.
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