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Monolithic optical transmitter circuit using the InGaP/GaAs material system

 

作者: D. T. Nichols,   J. Lopata,   W. S. Hobson,   P. R. Smith,   N. K. Dutta,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 9  

页码: 1033-1034

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113565

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A strained InGaP/GaAs/InGaAs multiquantum well laser has been monolithically integrated with GaAs metal–semiconductor field effect transistors (MESFETs) in a differential pair configuration to form a transmitter circuit. The structure utilized a single epitaxial growth step in which the laser was grown on top of the MESFET. The circuits operated with bandwidths as high as 4 GHz. ©1995 American Institute of Physics.

 

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