Surface dynamics during CdTe growth by molecular beam epitaxy
作者:
A. Arnoult,
J. Cibert,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 18
页码: 2397-2399
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113952
出版商: AIP
数据来源: AIP
摘要:
The dynamics of growth of CdTe by molecular beam epitaxy is studied by RHEED intensity oscillations. The transition to growth by step propagation is observed at lower temperature (i.e., the diffusion length is larger) on the Te‐rich (2×1) surface than on the Cd‐richc(2×2)–(2×1) one. A strong anisotropy is found, which suggests that growth islands are elongated in the [11¯0] direction. In addition, sublimation cannot be neglected, with at least two mechanisms with different activation energies. ©1995 American Institute of Physics.
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