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Surface dynamics during CdTe growth by molecular beam epitaxy

 

作者: A. Arnoult,   J. Cibert,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 18  

页码: 2397-2399

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113952

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The dynamics of growth of CdTe by molecular beam epitaxy is studied by RHEED intensity oscillations. The transition to growth by step propagation is observed at lower temperature (i.e., the diffusion length is larger) on the Te‐rich (2×1) surface than on the Cd‐richc(2×2)–(2×1) one. A strong anisotropy is found, which suggests that growth islands are elongated in the [11¯0] direction. In addition, sublimation cannot be neglected, with at least two mechanisms with different activation energies. ©1995 American Institute of Physics.

 

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