首页   按字顺浏览 期刊浏览 卷期浏览 Effect of thin HgTe layers on dislocations in HgCdTe layers on Si substrates
Effect of thin HgTe layers on dislocations in HgCdTe layers on Si substrates

 

作者: T. Okamoto,   T. Saito,   S. Murakami,   H. Nishino,   K. Maruyama,   Y. Nishijima,   H. Wada,   M. Nagashima,   Y. Nogami,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 5  

页码: 677-678

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117803

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have found the effects of HgTe layers on dislocations of (111)BHgCdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. The dislocations in HgCdTe layers were reduced by inserting thin HgTe layers between HgCdTe and CdTe buffer layers. Using this method, the dislocation density of 2.3×106cm−2was obtained, which is less than quarter that of HgCdTe layers without HgTe. ©1996 American Institute of Physics.

 

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