A novel AlGaAs/AlAs–TiO2/SiO2hybrid distributed Bragg reflector is implemented in a planar vertical cavity (top)‐surface emitting laser (VCSEL) to control emission (near 850 nm) to a single TEM00‐like mode. This structure exhibits ≳30 dB side‐mode suppression ratio and constant divergence (or modal profile) throughout its operating range (i.e., the detrimental effects of thermal lensing inherent in implanted VCSELs are eliminated); moreover, a record low threshold voltage &bartil;1.6 V, (0.16 V above photon energy) is obtained, without sacrificing the producibility of the standard all‐epitaxial structure. ©1995 American Institute of Physics.