Low‐temperature metal‐oxide‐semiconductor field‐effect transistor preamplifier
作者:
Jim Imai,
Ruben Flores,
期刊:
Review of Scientific Instruments
(AIP Available online 1993)
卷期:
Volume 64,
issue 10
页码: 3024-3025
ISSN:0034-6748
年代: 1993
DOI:10.1063/1.1144353
出版商: AIP
数据来源: AIP
摘要:
This reliable, high input impedance, unity gain metal‐oxide‐semiconductor field‐effect transistor preamplifier is an improved design for cryogenic applications. The high input impedance is well suited for applications involving capacitive transducers. This circuit is directly immersible in liquid helium and thereby reduces the noise and spurious pickup associated with remotely located preamplifiers. In addition, the circuit utilizes easily available commercial parts which will reduce cost and the need to order nonstandard components.
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