首页   按字顺浏览 期刊浏览 卷期浏览 Monovacancy formation energy in III–V compound semiconductors from positron anni...
Monovacancy formation energy in III–V compound semiconductors from positron annihilation measurements

 

作者: A. Sen Gupta,   S.V. Naidu,   P. Sen,  

 

期刊: Radiation Effects  （Taylor Available online 1985）
卷期: Volume 88, issue 1-2  

页码: 101-104

 

ISSN:0033-7579

 

年代: 1985

 

DOI:10.1080/00337578608207500

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The Doppler broadening annihilation lineshape measurements have been performed in GaP and GaAs in the temperature ranges 132–675 K and 144–550 K respectively, in thermal equilibrium. The data show a pronounced vacancy trapping effect. From the knowledge of the threshold temperature,Tt, the vacancy formation energy has been predicted as 0.52 eV for GaP and 0.57 eV for GaAs.

 

点击下载:  PDF (213KB)



返 回