Detection of the metastable state of the EL2 defect in GaAs
作者:
J. C. Bourgoin,
T. Neffati,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 8
页码: 4124-4125
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365724
出版商: AIP
数据来源: AIP
摘要:
Using a classical photocapacitance technique, we have transformed the well-known EL2 defects, related to the As antisite in GaAs, into their metastable states. Using the capacitance, we have monitored the temperature dependence of the electron occupancy of these metastable states at thermal equilibrium. From this study, we deduce that a level located at 40 meV below the conduction band is associated with electron ionization from the metastable EL2 states. ©1997 American Institute of Physics.
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