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A new metallization technique for very large scale integrated structures: Experiments and computer simulation

 

作者: H. P. Bader,   M. A. Lardon,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 4  

页码: 833-836

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583521

 

出版商: American Vacuum Society

 

关键词: VLSI;ETCHING;FABRICATION;METALLIZATION;COMPUTERIZED SIMULATION;VACUUM EVAPORATION;SPUTTERING;RESOLUTION;Al

 

数据来源: AIP

 

摘要:

A new metallization process was developed. Grooves and holes with an aspect ratio of up to 1 were completely filled and partially planarized by the combination of high vacuum evaporation and sputter etching in a multiple cycle alternating process. Excellent agreement between experimental and computer simulated groove and hole profiles was achieved.

 

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