Raman analysis of the configurational disorder inAlxGa1−xNfilms
作者:
Leah Bergman,
Michael D. Bremser,
William G. Perry,
Robert F. Davis,
Mitra Dutta,
Robert J. Nemanich,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 15
页码: 2157-2159
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119367
出版商: AIP
数据来源: AIP
摘要:
Raman analysis of theE2mode ofAlxGa1−xNin the composition range0⩽x⩽1is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of theE2mode was found to exhibit a maximum at a compositionx≅0.5indicative of a random disordered alloy system. ©1997 American Institute of Physics.
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