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Raman analysis of the configurational disorder inAlxGa1−xNfilms

 

作者: Leah Bergman,   Michael D. Bremser,   William G. Perry,   Robert F. Davis,   Mitra Dutta,   Robert J. Nemanich,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 15  

页码: 2157-2159

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119367

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Raman analysis of theE2mode ofAlxGa1−xNin the composition range0⩽x⩽1is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of theE2mode was found to exhibit a maximum at a compositionx≅0.5indicative of a random disordered alloy system. ©1997 American Institute of Physics.

 

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