Pixelless infrared imaging utilizing ap-type quantum well infrared photodetector integrated with a light emitting diode
作者:
L. B. Allard,
H. C. Liu,
M. Buchanan,
Z. R. Wasilewski,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 21
页码: 2784-2786
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119058
出版商: AIP
数据来源: AIP
摘要:
We present experimental results which support a recently proposed scheme for infrared imaging through the combined use of a photon frequency up-conversion device with a charge coupled device (CCD) camera. The epitaxial device consists of a long wavelengthp-type GaAs/AlGaAs quantum well infrared photodetector (QWIP) on top of which is grown a shorter wavelength InGaAs/GaAs light emitting diode (LED). Upon long wavelength infrared excitation of the QWIP, near infrared light is generated by the LED whose output is directed towards a commercial CCD array where the up-converted image of the long wavelength infrared source object is formed. ©1997 American Institute of Physics.
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