Impurity effects in transition metal silicides
作者:
C.‐D. Lien,
M‐A. Nicolet,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1984)
卷期:
Volume 2,
issue 4
页码: 738-747
ISSN:0734-211X
年代: 1984
DOI:10.1116/1.582872
出版商: American Vacuum Society
关键词: SILICIDES;THIN FILMS;IMPURITIES;DOPING PROFILES;PHYSICAL PROPERTIES;CRYSTAL DOPING;ANNEALING;ELECTRICAL PROPERTIES;METALS;silicides
数据来源: AIP
摘要:
Impurities can affect the properties of silicides directly by virtue of their presence. Impurities can also influence the processes by which silicides are formed. The effect of impurities on the reaction of transition metal films with a silicon substrate induced by thermal annealing are well documented. The interpretation of these results is discussed. It is shown that impurity redistribution is a major factor in determining how significant the effect of an impurity is. Redistribution observed for dopant impurities is also discussed.
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