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Reflectivity spectra of epitaxial GaAs‐rich GaAs1−xSbx

 

作者: E. Beata Radojewska,   Tadeusz Brys´kiewicz,   Lech Je¸dral,   Janusz Brzezin´ski,   Wojciech Lewandowski,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 9  

页码: 988-989

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95473

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Epitaxial single‐crystalline GaAs‐rich GaAs1−xSbxlayers have been examined at room and liquid nitrogen temperatures by means of reflectivity measurements in the fundamental absorption region. The energies of observed interband transitions have been linearly correlated with the composition.

 

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