Gallium arsenide and other compound semiconductors on silicon
作者:
S. F. Fang,
K. Adomi,
S. Iyer,
H. Morkoc¸,
H. Zabel,
C. Choi,
N. Otsuka,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 7
页码: 31-58
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346284
出版商: AIP
数据来源: AIP
摘要:
The physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed in this paper. The nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail. The properties of devices fabricated in GaAs and other compound semiconductors grown on Si substrates are discussed in comparison with those grown on GaAs substrates. The advantages of GaAs and other compound semiconductors on Si, namely, the low cost, superior mechanical strength, and thermal conductivity, increased wafer area, and the possibility of monolithic integration of electronic and optical devices are also discussed.
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