CdNiTe nanostructured thin films were prepared by radio frequency sputtering from a target of CdTe and nickel compressed powders. The structural and electrical film properties were studied as a function of the atomic nickel concentration in the films (x=0.05, 0.10, and 0.15). X‐ray diffraction patterns showed a cubic CdTe parent structure with a (111) preferential orientation. The microcrystalline grain size in the films showed a systematic decrease with the increase of Ni content, starting with grain sizes of around 35 nm forx=0.05, down to an average of 26 nm forx=0.15. From scanning electron microscopy micrographs, a fine granular morphology with a random distribution of grain sizes in the films was observed. The film electrical resistivity was measured as a function of the temperature in the rangeT: 26–473 K. The temperature dependence of the dark resistivity over this wide temperature range showed a clear deviation from a simple thermally activated carrier transport mechanism. ©1996 American Institute of Physics.