Channeled ion implantation of as+ in silicon at 300°c
作者:
G.N. Galkin,
V.A. Dravin,
M.S. Epifanov,
Z.M. Khamdokhov,
V.S. Kulikauskas,
期刊:
Radiation Effects
(Taylor Available online 1983)
卷期:
Volume 77,
issue 1-2
页码: 57-66
ISSN:0033-7579
年代: 1983
DOI:10.1080/00337578308224722
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Spatial distribution and lattice location of implanted As atoms in <111> and <100> Si as well as spatial distribution of radiation defects were studied by the RBS techniques after channeled implantation of 30 keV As+ ions with a dose of 3 × 1015 cnr2 at 300°C. The profile of As atoms was observed to have two maxima due to superposition of the profiles of initially nonchanneled and dechanneled ions. The aligned As+ ion beam generates fewer defects than the random one. The radiation defect profiles both after channeled and random implantations at 300°C are of the well pronounced bimodal type with a minimum at the depth of the maximum of elastic energy losses of nonchanneled As+ ions. A model of the layer of disordered zones with vacancy-defect nuclei and interstitial-defect shells is proposed. Annealing by a ruby laser with a pulse energy density of 1 J/ cm2 and duration 40 ns results in removal of the radiation defects and flattening of the substitutional As atom profile.
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