Epitaxially grown AlN and its optical band gap
作者:
W. M. Yim,
E. J. Stofko,
P. J. Zanzucchi,
J. I. Pankove,
M. Ettenberg,
S. L. Gilbert,
期刊:
Journal of Applied Physics
(AIP Available online 1973)
卷期:
Volume 44,
issue 1
页码: 292-296
ISSN:0021-8979
年代: 1973
DOI:10.1063/1.1661876
出版商: AIP
数据来源: AIP
摘要:
Single‐crystal layers of AlN have been grown on sapphire substrates between 1000 and 1100 °C by vapor‐phase reaction of aluminum chlorides with ammonia. The purity, color, crystallinity, growth morphology, and electrical resistivity of the epitaxial layers have been investigated. Infrared specular reflection measurements showed the presence of an appreciable strain at the AlN‐sapphire epitaxy interface. Optical absorption data strongly suggest the AlN is adirectband‐gap material with a value of about 6.2 eV at room temperature.
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