Characterization of the ZnSe heteroepilayer on a GaAs/Si substrate
作者:
M. K. Lee,
M. Y. Yeh,
J. H. Chang,
K. Y. Yu,
Y. F. Lin,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 8
页码: 3898-3900
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344996
出版商: AIP
数据来源: AIP
摘要:
ZnSe is a semiconductor with a direct band gap of 2.68 eV at room temperature, which makes it one of the most important materials for blue electroluminescent devices and short wavelength laser diodes. In this communication, heteroepitaxial growth of ZnSe on a GaAs/Si substrate by low‐pressure organometallic chemical vapor deposition is reported. The ZnSe/GaAs/Si epilayer exhibits a uniform surface morphology. Strong photoluminescence near‐band‐edge emission was observed. The thickness of the GaAs buffer layer seems to be an important factor in the energy shift of the photoluminescence peak.
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