From considerations of dopability, band offset, and lattice match, we find that of the various heterojunctions containing II–VI compounds, then‐AlSb/p‐ZnTe heterojunction has the most promising properties for fabricating visible light emitters. The materials lattice match to 0.5%. Experimental evidence and theoretical predictions for the band offset blocking minority carrier injection indicate a range from zero to 0.3 eV maximum. This range of values is the lowest for heterojunctions involvingwide‐gapII–VI’s. Substantial electron injection into thep‐ZnTe should be possible. Control of doping may suffice to suppress undesired hole current originating in the ZnTe.