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AlGaAs/Ge/GaAs heterostructures grown by molecular beam epitaxy

 

作者: Y. Wang,   N. Baruch,   W. I. Wang,   M. E. Cheney,   C. I. Huang,   R. L. Scherer,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1300-1302

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587028

 

出版商: American Vacuum Society

 

关键词: HETEROSTRUCTURES;TERNARY COMPOUNDS;GERMANIUM;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;SUBSTRATES;CRYSTAL ORIENTATION;INTERFACE STRUCTURE;ANTI−PHASE BOUNDARIES;Ge;(Al,Ga)As;GaAs

 

数据来源: AIP

 

摘要:

We report the comparison studies of molecular beam epitaxial growth of AlGaAs/Ge/GaAs heterostructures on differently oriented GaAs substrates. We have investigated the molecular beam epitaxial growth of Ge on GaAs, and GaAs and AlGaAs on Ge epitaxial layers with the aim of obtaining device‐quality interfaces of AlGaAs and GaAs epilayers on Ge which are free of antiphase domains. Our results show that the junctions grown on (311)B oriented substrates have better electrical characteristics than those grown on (100) oriented substrates. This is due to the absence of antiphase domains and less interface charge in heterostructures grown on (311)B substrates.

 

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