An infrared absorption investigation of hydrogen, deuterium, and nitrogen in ZnSe grown by molecular beam epitaxy
作者:
Zhonghai Yu,
S. L. Buczkowski,
L. S. Hirsch,
T. H. Myers,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 11
页码: 6425-6428
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363661
出版商: AIP
数据来源: AIP
摘要:
Surprising concentrations of hydrogen and deuterium, as high as 5×1020cm−3, were incorporated into nitrogen‐doped ZnSe grown on GaAs by molecular beam epitaxy. Infrared absorption bands due to local vibration modes were observed at 3193 and 783 cm−1for ZnSe:N,H samples, and at 2368 cm−1for ZnSe:N,D samples using Fourier transform infrared spectroscopy. The isotopic shift in the absorption band agrees with predictions of a simple harmonic oscillator approximation for N–H bonding. The variation of the absorption band associated with substitutional nitrogen with nitrogen concentration indicates that not all nitrogen is substitutional, and also exhibited significant changes related to hydrogen incorporation. ©1996 American Institute of Physics.
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