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Deposition of crystals from the plasmas of ZrO2, HfO2, ThO2, and CeO2

 

作者: Katsuhiro Kawabuchi,   Saburo Magari,  

 

期刊: Journal of Applied Physics  (AIP Available online 1979)
卷期: Volume 50, issue 10  

页码: 6222-6229

 

ISSN:0021-8979

 

年代: 1979

 

DOI:10.1063/1.325757

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Deposition occurs onto a cathode from an oxide plasma generated inside a hollow oxide anode by the mechanism called the electrolysis of plasma. The temperature of the cathode is usually over 2000 °C during deposition. Deposits attain fairly large crystalline sizes (about 0.3 mm) in spite of their high deposition rates. And besides, some unusual crystals are formed. For the deposition from ZrO2, HfO2, and ThO2plasmas, the deposition rate, growth rate, and the current efficiency increase with the plasma current (0.4–8 A) and with feeding O2gas into the plasmas. On the other hand, heating a cathode externally or feeding Ar gas into them leads to the reduction of those rates, the current efficiency, and yield. The maximum growth rate from the ThO2plasma is 8.4 &mgr;m/sec. Yields exceed 90% in general. Mass‐spectrometric analyses showed that the main depositing ion species is ZrO+for the deposition from the ZrO2plasma. Deposits obtained are usually black oxides, whose O/M(M=Zr, Hf, and Th) ratios are 1.95, 1.95, and 1.64, respectively. The deposits from ZrO2, HfO2, and ThO2plasmas are monoclinic ZrO2with precipitates of metallic &agr;‐Zr, monoclinic HfO2with a small amount of unknown hexagonal crystals (whose lattice parameters area=3.17 andc=5.02 A˚), and a mixture of fcc ThO2and Th, respectively. When O2gas is fed into those plasmas, transparent oxide crystals of stoichiometric composition are formed. The deposits from a CeO2plasma are the black oxides whose O/Ce ratios are 1.53 on the average. Contrary to the phase diagram of the Ce‐O system, they show x‐ray structures of fcc crystals whose lattice parameter varies from 5.506 to 5.411 A˚.

 

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