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1/ f  noise and number fluctuations

 

作者: R. H. M. Clevers,  

 

期刊: Journal of Applied Physics  (AIP Available online 1986)
卷期: Volume 60, issue 10  

页码: 3794-3796

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337548

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In a semiconductor the density of carriers in each subband fluctuates owing to intraband transitions. We consider the spectral density for number fluctuations and for conductance fluctuations arising from such intraband transitions. It is shown that the spectral density for number fluctuations equals zero. If the mobility is the same in all subbands, the spectral density for conductance fluctuations equals zero. Otherwise the conductance fluctuations show a non‐1/ fspectrum.

 

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