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Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°C

 

作者: L. Eriksson,   G.R. Bellavance,   J.A. Davies,  

 

期刊: Radiation Effects  （Taylor Available online 1969）
卷期: Volume 1, issue 1  

页码: 71-73

 

ISSN:0033-7579

 

年代: 1969

 

DOI:10.1080/00337576908234463

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

High substitutional components have been observed in Bi and TI implants in silicon without any annealing treatment. Implant conditions were ∼1013ions/cm2at 40keV and 25 °C. The lattice location of the implanted atoms has been determined by means of the “channeling” technique.

 

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