Intermixing and shape changes during the formation of InAs self-assembled quantum dots
作者:
J. M. Garcı´a,
G. Medeiros-Ribeiro,
K. Schmidt,
T. Ngo,
J. L. Feng,
A. Lorke,
J. Kotthaus,
P. M. Petroff,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 14
页码: 2014-2016
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119772
出版商: AIP
数据来源: AIP
摘要:
The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects. ©1997 American Institute of Physics.
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