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Drift Velocity of Electrons in Silicon at High Electric Fields from 4.2° to 300°K

 

作者: V. Rodriguez,   M‐A. Nicolet,  

 

期刊: Journal of Applied Physics  （AIP Available online 1969）
卷期: Volume 40, issue 2  

页码: 496-498

 

ISSN:0021-8979

 

年代: 1969

 

DOI:10.1063/1.1657427

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The drift velocity of electrons in silicon at high electric fields is measured in the⟨111⟩direction over the range of lattice temperatures from 4.2° to 300°K. It is established that in this range a limiting drift velocity exists. Its temperature dependence is measured. The samples used and the method of measurement are briefly described.

 

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