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Laser‐induced reactions of semiconductor surfaces

 

作者: Q. Z. Qin,   Y. L. Li,   P. H. Lu,   Z. J. Zhang,   Z. K. Jin,   Q. K. Zheng,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 1  

页码: 201-205

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586302

 

出版商: American Vacuum Society

 

关键词: LASER RADIATION;CHLORINE MOLECULES;GERMANIUM;SILICON;GALLIUM ARSENIDES;INDIUM PHOSPHIDES;CHEMICAL REACTION YIELD;SURFACE REACTIONS;ETCHING;VISIBLE RADIATION;NEAR INFRARED RADIATION;Ge;Si;GaAs;InP

 

数据来源: AIP

 

摘要:

Laser‐induced reactions of Ge(111), Si(111), GaAs(100), and InP(100) surfaces with chlorine under 355‐, 560‐, and 1064‐nm laser irradiation have been investigated using a supersonic beam technique and time‐resolved mass spectrometry. It has been found that the reaction yields depend not only on the laser fluence and wavelength, but also on the translational energy of the incident chlorine molecules. A possible mechanism of laser‐induced reactions is proposed.

 

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