Eglash and co‐workers [J. Appl. Phys.61, 5159 (1987)] studying the dependence of the voltage intercept of theC−2‐Vplots for the engineered Schottky barrier diodes on the thickness of thep+region used an analytical expression of theC‐Vcharacteristics for the prediction of the voltage intercept. In this communication, a general expression is derived for theC‐Vcharacteristics of the Schottky contacts with changing dopant concentration at theM‐Sinterface. It is shown that the expression used by Eglash and co‐workers is a special case of this general expression.