Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope—Si(100) at 80 K
作者:
K. Hata,
M. Ishida,
K. Miyake,
H. Shigekawa,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 1
页码: 40-42
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121716
出版商: AIP
数据来源: AIP
摘要:
We have utilized the tip of a scanning tunneling microscope to perturb a specific local structure (the C defect) of Si(100) at 80 K, and observed the dynamical symmetric⇔buckled transition of the surrounding dimers. The observed large-scale transition implies that the configuration of the dimers is determined by a detailed balance among many elastic long-range forces generated by the surrounding C defects. ©1998 American Institute of Physics.
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