25 nm pitch GaInAs/InP buried structure: Improvement by calixarene as an electron beam resist and tertiarybutylphosphine as a P source in organometallic vapor phase epitaxy regrowth
作者:
Y. Miyamoto,
A. Kokubo,
T. Hattori,
H. Hongo,
M. Suhara,
K. Furuya,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 6
页码: 3894-3898
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590430
出版商: American Vacuum Society
关键词: (Ga,In)As;InP
数据来源: AIP
摘要:
To achieve a fine periodic semiconductor structure by electron beam (EB) lithography, calixarene was used as an EB resist. A 25 nm pitch InP pattern was formed successfully and 40 nm pitch InP structures were achieved with good reproducibility. A shorter developing time, precise stage motion, accurate control of the widths of lines and spaces, and slightO2ashing were important to obtain a fine InP pattern by a two-step wet chemical etching process. Furthermore, the fabricated periodic InP pattern was buried in a GaInAs structure by organometallic vapor phase epitaxy. The introduction of tertiarybutylphosphine as the phosphorus source prevented the fine structure from deforming when the temperature was raised and a 25 nm pitch periodic structure was buried successfully.
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