Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot
作者:
S. Fukatsu,
H. Sunamura,
Y. Shiraki,
S. Komiyama,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 2
页码: 258-260
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119514
出版商: AIP
数据来源: AIP
摘要:
Phononless radiative recombination is observed in luminescence spectra of Ge quantum wells decorated by self-organized Stranski–Krastanow (S–K) dots grown on Si (100). External uniaxial tensile stress along [011] allows the discrimination of phonon-missing optical transitions. The phononless recombination is attributed to a dipole-allowedkdiagonal&Dgr;1-&Ggr;25′interband transition involving the hole in the Ge wetting layer and the electron in a Siquantum dotencompassed by large S–K dots. The weak oscillator strength of the phononless recombination is evidenced by its slow decay kinetics. The results indicate that low-lying broad band features due to S–K dots are also of phononless origins. ©1997 American Institute of Physics.
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