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5:1on‐offcontrast InGaAs/InP multiple quantum well Fabry–Perot e´talon modulator

 

作者: A. Tomita,   Y. Kohga,   A. Suzuki,   T. Terakado,   A. Ajisawa,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 18  

页码: 1817-1819

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102175

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the first demonstration of an InGaAs/InP multiple quantum well Fabry–Perot e´talon modulator. The obtainedon‐offcontrast is 5:1 at −16 V applied voltage for 1540 nm wavelength light. The absorption coefficient of the multiple quantum well around 1540 nm increases from 1000 to 6300 cm−1as the applied voltage increases from 0 to −16 V, and the relative refractive index change is up to −0.9%.

 

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