Hydrogen in crystalline silicon: A deep donor?
作者:
M. Capizzi,
A. Mittiga,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 14
页码: 918-920
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98032
出版商: AIP
数据来源: AIP
摘要:
An analysis of the hydrogen concentration profiles obtained from secondary ion mass spectrometry in boron‐doped silicon points to a deep donor hydrogen state located ∼0.1 eV above the Fermi level for intrinsic material. The theoretical model takes into account both neutral and ionized hydrogen diffusion, the latter enhanced by a built‐in electric field associated with the hydrogen doping gradient. The activation energies for the two diffusion processes are ∼1.2 and ∼0.8 eV, respectively. A formerly reported discrepancy between low‐ and high‐temperature results is lifted.
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