Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc &agr;‐Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high‐energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance (FMR), and vibrating sample magnetometry. The FMR linewidth and measured coercive field are significantly smaller than previously reported for single crystal Fe films.