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Spectral and angular characteristics of radiation produced by passage of 10 gev electrons through thick Si and Ge crystals

 

作者: M.D. Bavizhev,   YU.V. Nilsen,   B.A. Yuriev,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1991）
卷期: Volume 115, issue 4  

页码: 297-305

 

ISSN:1042-0150

 

年代: 1991

 

DOI:10.1080/10420159108220576

 

出版商: Taylor & Francis Group

 

关键词: Relativistic electrons;electron channeling;channel radiation;radiation characteristics;Bremsstrahlung

 

数据来源: Taylor

 

摘要:

The results of studying the angular and spectral characteristics of X-rays produced by passage of 10 GeV electrons through sufficiently thick Si (0.8 and 3.0 mm) and Ge (0.5 mm) single crystals at small angles to the ⟨111⟩ crystallographic axis are presented. Information have been obtained on the excess of the spectralangular characteristics of radiation in the crystal over respective values for an amorphous target.

 

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