It has been demonstrated that Si substitution in aPbTiO3target helps to avoid the formation of a pyrochlore phase, which otherwise occurs during fabrication of the films directly on Si(100) by the pulsed laser deposition technique. The films are perfectlyc-axis oriented. Moreover, the ferroelectric properties ofPbTiO3are not affected by Si substitution. As silicon helps the realization of the films at low substrate temperature, the Pb/Ti ratio is maintained close to 1 and the loss factortan &dgr;in the range of 0.02–0.05. Thus, the integration of nonvolatile ferroelectric random access memory on semiconductors is shown to be possible in a reliable, cost effective, and simple manner. ©1998 American Institute of Physics.