Diamond crystals of 1 &mgr;m mean size were grown on (100) silicon substrates by ArF (193 nm) laser ablation of graphite in a hydrogen atmosphere with a laser power density of 1.3×108W/cm2at relatively low substrate temperature (450 °C). Raman spectroscopy analysis confirmed the diamond cubic structure of the crystals by the presence of a sharp peak at 1332 cm−1. When a KrF (248 nm) laser was used instead of the ArF no diamond phases were detected in the deposited films and the Raman spectra showed only the two bands centered at 1340 and 1600 cm−1characteristic of amorphous carbon. The results demonstrated that the laser wavelength is a determinant parameter in the growth of diamond by laser ablation of graphite. ©1995 American Institute of Physics.