Dynamics of the neutral‐acceptor‐bound exciton transition (theI1line) in a Mg dopedp‐type GaN epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) have been studied by time‐resolved photoluminescence emission spectroscopy. Two emission lines in theI1transition region have been resolved in the time‐resolved spectra, possibly due to the existence of two energy states of the Mg impurities after postgrowth thermal annealing. The recombination lifetimes of the acceptor‐bound exciton transition have been measured under different conditions including temperature, excitation intensity, and emission energy. From these measurements, a value of about 450 ps for the radiative recombination lifetime has been obtained, which is an important physical quantity for optoelectronic device applications based on GaN. ©1995 American Institute of Physics.