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Novel precursors for the MOCVD of ferroelectric thin films

 

作者: TimothyJ. Leedham,   AnthonyC. Jones,   PeterJ. Wright,   MichaelJ. Crosbie,   DennisJ. Williams,   HywelO. Davies,   Paul O'Brien,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 26, issue 1-4  

页码: 85-92

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908215613

 

出版商: Taylor & Francis Group

 

关键词: MOCVD;ferroelectric thin films;novel precursors

 

数据来源: Taylor

 

摘要:

MOCVD is an attractive technique for the deposition of ferroelectric thin films. In order to exploit the full potential of the technique, the properties of the metalorganic precursor sometimes need to be tailored in order to optimise process parameters. In this paper we describe how the substitution of simple alkoxide groups by β-diketonate or other chelating groups can lead to precursors with improved physical properties and optimised MOCVD performance.

 

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