首页   按字顺浏览 期刊浏览 卷期浏览 Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single qua...
Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single quantum well

 

作者: F. P. Logue,   D. T. Fewer,   S. J. Hewlett,   J. F. Heffernan,   C. Jordan,   P. Rees,   J. F. Donegan,   E. M. McCabe,   J. Hegarty,   S. Taniguchi,   T. Hino,   K. Nakano,   A. Ishibashi,  

 

期刊: Journal of Applied Physics  （AIP Available online 1997）
卷期: Volume 81, issue 1  

页码: 536-538

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.364094

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se–ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1×1018cm−3and we deduce an ambipolar diffusion constant of 1.7 cm2 s−1. ©1997 American Institute of Physics.

 

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