Preparation and Properties of Reactively Sputtered Silicon Nitride
作者:
Alan R. Janus,
George A. Shirn,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1967)
卷期:
Volume 4,
issue 1
页码: 37-40
ISSN:0022-5355
年代: 1967
DOI:10.1116/1.1492515
出版商: American Vacuum Society
数据来源: AIP
摘要:
Transparent, adherent, amorphous silicon nitride films in the thickness range of 300 to 15000 Å were deposited on a variety of substrate materials by the reactive sputtering technique. The supported glow-discharge approach was found to be superior to glow-discharge sputtering for the preparation of a uniform, stoichiometric film. Electrical, optical, and chemical properties of the film reflect a density that is less than that reported for the bulk nitride.
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