Properties of laser ablated porous silicon
作者:
D. P. Savin,
Ya. O. Roizin,
D. A. Demchenko,
E. Mugen´ski,
I. Soko´lska,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 20
页码: 3048-3050
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116835
出版商: AIP
数据来源: AIP
摘要:
Luminescent films of porous silicon were obtained by laser ablation of crystalline silicon. The spectral and temporal characteristics of light emission from laser ablated porous silicon (LAPS) films critically depend on the chemical composition of the atmosphere in which they were fabricated. Luminescent characteristics, spatial structure, and chemical composition of LAPS were compared with the properties of porous silicon obtained by a standard electrochemical method on the same silicon substrate. ©1996 American Institute of Physics.
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