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Properties of laser ablated porous silicon

 

作者: D. P. Savin,   Ya. O. Roizin,   D. A. Demchenko,   E. Mugen´ski,   I. Soko´lska,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 69, issue 20  

页码: 3048-3050

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.116835

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Luminescent films of porous silicon were obtained by laser ablation of crystalline silicon. The spectral and temporal characteristics of light emission from laser ablated porous silicon (LAPS) films critically depend on the chemical composition of the atmosphere in which they were fabricated. Luminescent characteristics, spatial structure, and chemical composition of LAPS were compared with the properties of porous silicon obtained by a standard electrochemical method on the same silicon substrate. ©1996 American Institute of Physics.

 

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