首页   按字顺浏览 期刊浏览 卷期浏览 Electrical activity of the first‐ and second‐order twins and grain bounda...
Electrical activity of the first‐ and second‐order twins and grain boundaries in silicon

 

作者: A. Bary,   G. Nouet,  

 

期刊: Journal of Applied Physics  （AIP Available online 1988）
卷期: Volume 63, issue 2  

页码: 435-438

 

ISSN:0021-8979

 

年代: 1988

 

DOI:10.1063/1.340259

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The structural and electrical properties of twins in polycrystalline silicon materials have been investigated by electron‐beam‐induced current and transmission electron microscopy. The electrical activity of the first‐ and second‐order twins is related to segregation effects and to their structure, as described by geometrical models.

 

点击下载:  PDF (545KB)



返 回