c-axis texturedLa0.7Sr0.3MnO3−&dgr;(LSMO) films were fabricated onSiO2/Si(001) substrates using aBi4Ti3O12(BTO) template layer. Electrical and magnetic properties of LSMO were investigated. The LSMO/BTO layer of this structure has no in-plane alignment. Even though a ferromagnetic transition temperature,TC,is as high as that of the epitaxial LSMO film (360 K), a resistivity peak temperature,TP,is about 140 K lower thanTC.The resistivity behavior as a function of temperature for LSMO/BTO/SiO2/Si films is found to be dominated by grain boundary effects. Low field sensitive magnetoresistance which suggests spin tunneling through the grain boundaries is also observed at room temperature. ©1997 American Institute of Physics.